Method of forming a MOS transistor

ABSTRACT

A method of forming a MOS transistor, in which a co-implantation is performed to implant an implant into a source region and a drain region or a halo implanted region to effectively prevent dopants from over diffusion in the source region and the drain region or the halo implanted region, for obtaining a good junction profile and improving short channel effect. The implant comprises carbon, a hydrocarbon, or a derivative of the hydrocarbon, such as one selected from a group consisting of C, C x H y   + , and (C x H y ) n   + , wherein x is a number of 1 to 10, y is a number of 4 to 20, and n is a number of 1 to 1000.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates a method of forming a MOS transistor, andparticularly a method of forming a MOS transistor having an improvedshort channel effect, comprising a step of co-implantation using animplant comprising carbon, hydrocarbon, or a derivative thereof.

2. Description of the Prior Art

Field effect transistors (FETs) are important electronic devices in thefabrication of integrated circuits, and as the size of the semiconductordevice becomes smaller and smaller, the fabrication of the transistorsalso improves and is constantly enhanced for fabricating transistorswith smaller sizes and higher quality.

In the conventional method of fabricating transistors, a gate structureis first formed on a substrate, and a lightly doped drain (LDD) isformed on the two corresponding sides of the gate structure. Next, aspacer is formed on the sidewall of the gate structure and an ionimplantation process is performed to form a source/drain region withinthe substrate by utilizing the gate structure and spacer as a mask.Finally, an anneal process is performed.

Refer to FIG. 1, a schematic diagram showing a conventional field effecttransistor. As shown in FIG. 1, a gate structure 106 having a gatedielectric layer 102 and a gate electrode 104 is first formed on asubstrate 100. Next, an ion implantation process is performed to form alightly doped drain 110 in the substrate 100. Next, a spacer 108 isformed on the sidewall of the gate structure 106 and another ionimplantation is performed to form a source/drain region 112 in thesubstrate 100. Subsequently, a rapid thermal process (RTP) is performedto obtain a FET.

With the device scaling down, it's difficult to control the junctiondepth (X_(j)) and also reduce the access resistance. The short channeleffect (SCE) noticeably depends on the junction depth. The junctiondepth for the source/drain of a transistor must be reduced to avoid theshort channel effect of the MOS arisen from the shrinkage of the MOSsize to increase the integration of the device. A lot of papers havedemonstrated many approaches to improve the pFET SCE. But from 65 nmnode and beyond, the conventional As implantation and spike RTP canhardly meet the nFET SCE requirement.

From the above viewpoint, the shallower as-implant depth by heavy ionsor less diffusion activation tool is needed. Unfortunately the advancedactivation tools (for example, flash or laser anneal) are underdevelopment and not mature.

A method of manufacturing a PMOS transistor has been disclosed toimplant fluorine in a source/drain extension region or source/drainregion to be with the dopants thereat together. The diffusion for thedopants can be improved during a subsequent annealing process, toalleviate the SCE.

However, due to transistors with smaller sizes and higher quality areconstantly desired, an FET with an improved SCE and a good junctionprofile and a method of manufacturing it are still needed.

SUMMARY OF THE INVENTION

One object of the present invention is to provide a method of forming aMOS transistor with an improved short channel effect.

The method of forming a MOS transistor according to the presentinvention comprises the steps as follows. First, a substrate having agate thereon, a source region and a drain region therein with a channelregion under the gate therebetween is provided. Next, the source regionand the drain region are pre-amorphized to form amorphized regions.Subsequently, a first ion implantation is performed to implant a firstdopant in the source region and the drain region to form a first dopedregion. At least a spacer is formed on the sidewalls of the gate. Asecond ion implantation is performed to implant a second dopant in thesource region and the drain region to form a second doped region. Thesource region and the drain region are annealed to activate the firstdopant, regrow the amorphized regions to a substantially crystallineform, and form a junction profile. Among these steps, a co-implantationprocess is performed after pre-amorphizing the source region and thedrain region and before annealing the source region and the drainregion, to implant an implant in the source region and the drain region,wherein the implant comprises carbon, a hydrocarbon compound, or aderivative of the hydrocarbon compound.

In another embodiment of the present invention, the method of forming aMOS transistor comprises the steps as follows. First, a substrate havinga gate thereon, a source region and a drain region therein with achannel region under the gate therebetween is provided. Next, an implantis implanted into the source region and the drain region for achievingboth pre-amorphization and co-implantation of the source region and thedrain region to form amorphized regions with the implant, wherein theimplant comprises carbon, a hydrocarbon compound, or a derivative of thehydrocarbon compound. Next, a first ion implantation is performed toimplant a first dopant in the source region and the drain region to forma first doped region. At least one spacer is formed on the sidewalls ofthe gate. A second ion implantation is performed to implant a seconddopant in the source region and the drain region to form a second dopedregion. Finally, the source region and the drain region are annealed toactivate the first dopant, regrow the amorphized regions to asubstantially crystalline form, and form a junction profile.

Furthermore, the MOS transistor according to the present inventioncomprises a substrate having a gate thereon, a source region and a drainregion therein with a channel region under the gate therebetween; atleast a spacer disposed on a side wall of the gate; a light doped sourceregion and a light doped drain region disposed in the source region andthe drain region; a source and a drain disposed respectively in thesource region and the drain region at a side of the light doped sourceregion and a side the light doped drain region; and a halo implantedregion formed between the channel region and the source region andbetween the channel region and the drain region, wherein the haloimplanted region comprises an implant comprising carbon, a hydrocarboncompound, or a derivative of the hydrocarbon compound.

In another embodiment according to the present invention, the MOStransistor comprises a substrate having a gate thereon, a source regionand a drain region therein with a channel region under the gatetherebetween; at least a spacer disposed on a side wall of the gate; alight doped source region and a light doped drain region disposed in thesource region and the drain region; a source and a drain disposedrespectively in the source region and the drain region at a side of thelight doped source region and a side the light doped drain region; and ahalo implanted region formed between the channel region and the sourceregion and between the channel region and the drain region, wherein thehalo implanted region comprises an implant comprising carbon, ahydrocarbon compound, or a derivative of the hydrocarbon compound.

The method of forming a MOS transistor comprises a step ofco-implantation to implant carbon, a hydrocarbon compound, or aderivative of the hydrocarbon compound, such as one selected from agroup consisting of C, C_(x)H_(y) ⁺, and (C_(x)H_(y))_(n) ⁺, wherein xis a number of 1 to 10, y is a number of 4 to 20, and n is a number of 1to 1000, within substantially the same place as that of the lightlydoped drain or source, the source region and the drain region, or thehalo implanted region. Therefore, after a rapid thermal process isperformed, for example, by a conventional implanter and a spikeannealing tool, the diffusion of dopants co-existing with the implantsfrom the co-implantation can be reduced. That is, the diffusion of thedopants within the lightly doped drain or source, the source region andthe drain region, or the halo implanted region can be effectivelycontrolled, to obtain a good junction profile and an improved shortchannel effect.

These and other objectives of the present invention will no doubt becomeobvious to those of ordinary skill in the art after reading thefollowing detailed description of the preferred embodiment that isillustrated in the various figures and drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic structural diagram showing a conventional fieldeffect transistor;

FIG. 2 is a flow chart showing the method of forming a MOS transistoraccording to the present invention;

FIGS. 3 to 6 show cross sectional views for the method of forming a MOStransistor according to the present invention;

FIG. 7 is a flow chart showing another embodiment of the method offorming a MOS transistor according to the present invention;

FIG. 8 shows a cross sectional view for the method of forming a MOStransistor according to the present invention, in which the haloimplanted region comprises dopants and implants;

FIG. 9 shows the B profile comparison by a secondary ion massspectroscopy of PLDD made using the method according to the presentinvention and PLDD made by a conventional method; and

FIG. 10 shows the As profile comparison by a secondary ion massspectroscopy of NLDD made using the method according to the presentinvention and NLDD made by a conventional method.

DETAILED DESCRIPTION

Refer to FIGS. 2 to 6 for illustration of an embodiment according to thepresent invention. FIG. 2 is a flow chart showing the method of forminga MOS transistor according to the present invention. The method offorming a MOS transistor of the embodiment according to the presentinvention comprises the steps of follows. A substrate having a gate, asource region and a drain region, and a channel region is provided. Apre-amorphization 301 is performed to form an amorphized region in thesource region and the drain region, respectively. A co-implantation 302is performed to implant an implant within the source region and thedrain region. A light ion implantation 303 is performed to form a dopedregion in the source region and the drain region. A spacer is formed onthe sidewall of the gate. A source/drain ion implantation 304 isperformed to form a doped region. An anneal process 305 is performed toactivate the dopants, regrow the amorphized regions to a substantiallycrystalline form, and form a junction profile.

FIGS. 3 to 6 show cross sectional views for the method of forming a MOStransistor according to the present invention. As shown in FIG. 3,first, a substrate 200 is provided. A gate structure 206 comprises agate dielectric layer 202 and a gate electrode 204 on the substrate 200.The gate dielectric layer 202 comprises dielectric material such assilicon oxide. The gate electrode 204 comprises a conductive materialsuch as doped polysilicon. A source region and a drain region aredefined at two sides of the gate structure 206, and a channel region 201is under the gate structure 206. Next, the pre-amorphization 301 isperformed to form an amorphized region 212 in the source region and thedrain region, respectively, to destroy the lattice of the siliconcrystalline into an amorphous structure. The pre-amorphizingimplantation is performed by an ion implantation 210 through implant animplant into the source region and a drain region. The dopant may be,but not limited to, for example, silicon (Si), antimony (Sb), germanium(Ge), or arsenic (As). For example, a Ge implant having a dose of about5.0×10¹⁴ atoms/cm² with an implantation energy of about 40 KeV may beemployed, or an As implant having a dose of about 3.0×10¹⁵ atoms/cm²with an implantation energy of about 40 KeV may be employed. Theimplantation may be perpendicular to the implanted surface of with anangle as desired. An implantation angle of about 3 to 10 degrees may beused to generate an amorphized region extending to under the gate.

The co-implantation 302 is performed to implant an implant into thesource region and the drain region. For example, as shown in FIG. 4, theco-implantation is performed by an ion implantation 214 to form aco-doped region 216 in the light doped drain/source predeterminedregion. The place for the co-implant in the substrate is not limited tothe substantially same place as that of the subsequent dopant implantedby an LDD implantation, and it may be the substantially same place asthat of the subsequent dopant implanted by a source/drain implantation.Thus, the short channel effect due to over diffusion of the dopantsimplanted by the subsequent processes during the anneal process such asthe rapid thermal process can be reduced. The implantation energy maydepend on the implant position in the substrate, such as 3 KeV to 20KeV. The dose may be 1×10¹⁵ to 3×10¹⁵ atoms/cm³. The implant maycomprise carbon, hydrocarbon compound, or a derivative of thehydrocarbon compound, such as one selected from C, C_(x)H_(y) ⁺, and(C_(x)H_(y))_(n) ⁺, wherein x is a number of 1 to 10, and preferably 1;y is a number of 4 to 20, and preferably 4; and n is a number of 1 to1000, and preferably 800. The implantation may be perpendicular to theimplanted surface or with an angle as desired.

Referring to FIG. 5, the LDD implantation 303 is performed by an ionimplantation 218 using the gate 204 as a mask to implant a light dopantinto the amorphized region 212 to form a light source/drain region (LDD)220. In this embodiment, there is an implant from the co-implantation inLDD 220. The dopant used in the light ion implantation may be describedas follows. When C is used as an implant, a dopant such as As or P canbe used as a light dopant for the source/drain region, to form an n-typeLDD (NLDD), and a dopant such as B or BF₂ can be used as a light dopantfor the source/drain region, to form an p-type LDD (PLDD). WhenC_(x)H_(y) ⁺ or (C_(x)H_(y))_(n) ⁺ is used as an implant, a dopant suchas B, BF2, boron hydride, or a derivative thereof (such as B_(w)H_(z) ⁺,or (B_(w)H_(z))_(m) ⁺) can be used as a light dopant for thesource/drain region, to form an PLDD, in which, w is a number of 2 to30, and preferably 18, z is a number of 2 to 40, and preferably 22, andm is a number of 10 to 1000, and preferably 800. The dose for the lightdopant may be, for example, 10¹⁷ to 10²⁰ atoms/cm³.

After the LDD implantation, a spike rapid thermal process may be furtherperformed to activate dopants. Alternatively, the spike rapid thermalprocess is not performed at this manufacturing stage, and an annealprocess is performed after the source/drain implantation.

Subsequently, the source/drain implantation 304 is performed. As shownin FIG. 6, a spacer 222 is formed on the sidewall of the gate structure206. The spacer may be a single layer or a multi-layered structure. Forexample, the spacer may be composed of a lining layer (such as siliconoxide) and a silicon nitride layer or the spacer may be composed of asilicon oxide offset spacer and a silicon nitride spacer. Thereafter, anion implantation 224 is performed to implant a heavy dopant within thesource region and the drain region to form a heavily doped source/drain226. The implantation dose of the heavy dopant may be for example 10²⁰to 10²¹ atoms/cm³.

Finally, the anneal process 305 is performed, such as a rapid thermalprocess, or a spike anneal process to activate the dopant in thesubstrate 200 at a high temperature of, for example, 1000 to 1050° C. toform a desired junction profile and regrow the damaged lattice structureof the surface of the substrate 200 caused by ion implantations to asubstantially crystalline form.

In the flow chart shown in FIG. 2, the co-implantation 302 is performedafter the pre-amorphization 301 and before the light ion implantation303; however, it is noted that the diffusion of dopants in the substratecan be well controlled as long as the co-implantation 302 is performedbefore the anneal process 305. Accordingly, the co-implantation 302 maybe performed after the pre-amorphization 301 and before the light ionimplantation 303; or after the light ion implantation 303 and before thesource/drain implantation 304; or after the source/drain implantation304 and before the anneal process 305. Therefore, the implant isimplanted in the substrate 200 at a place substantially the same as thatof the light dopant in the lightly doped region or that of the heavydopant in the source/drain.

Referring to FIG. 7, a flow chart showing another embodiment of themethod of forming a MOS transistor according to the present inventionhas the same steps as the above-described embodiment, except that a haloimplantation is further comprised. A halo implant, also called a “pocketimplant,” has been used to reduce “punch through”, i.e., to limitlateral diffusion of the source and the drain dopants in MOStransistors. It is generally performed after the gate is defined andbefore the source/drain diffusion. Due to the masking effect of thegate, the halo implant peak concentration is near the source/drainregion. Away from the source/drain edge, under the gate, the depth ofthe peak halo concentration falls quickly.

As shown in FIG. 7, the halo implantation 306 is performed after theco-implantation 302 and before the light ion implantation 303.Nevertheless, it also can be performed after the pre-amorphization 301and before the co-implantation 302. The halo implant is of theconductivity type opposite to that of the source and drain of the MOSdevice. For example, As is used as a dopant in LDD and B or BF2 may beused as a halo implant to form an nFET. B or BH₂ is used as a dopant inLDD and As or P may be used as a halo implant to form a pFET. Theconcentration of the halo implant in the halo implanted region dependson the device size. The concentration is higher as the size is larger.The concentration may be between 1×10¹⁷ atoms/cm³ and 1×10¹⁸ atoms/cm³,for example. The ion flux may be at an implant angle of 0 to about 30degree, or greater, from normal (perpendicular) to the substrate, toprovide a halo implant which extends slightly under the gate.

In case the halo implantation is included to form the transistor, theimplant of the co-implantation may be implanted in the substrate at aplace substantially the same as that of the halo implant, in addition tothe place substantially the same as that of the light dopant in thelightly doped region or that of the heavy dopant in the source/drain.FIG. 8 shows an embodiment in which the halo implanted region 230comprises an implant from the co-implantation, in addition to the haloimplant. Thus, the diffusion of the halo implant can be well controlledto form a better junction profile.

When carbon, hydrocarbon, or a derivative thereof is implanted as animplant into the doped region and exists with dopants together, thediffusion of the dopants (such as, B or P) can be controlled because theimplant occupies the interstitials of the silicon crystalline structure.This situation facilitates the control for the diffusion of dopants, andthus a good junction profile can be obtained.

The method of forming a MOS transistor according to the presentinvention can be used to form a pPFET or an nFET. For example, whencarbon is used as a co-implant in the light doped drain/source, an NLDDcan be formed using, for example, As or P as a light dopant in thesource region and the drain region, and a PLDD can be formed using, forexample, B or BF₂ as a light dopant in the source region and the drainregion. When C_(x)H_(y) ⁺ or (C_(x)H_(y))_(n) ⁺ is used as a co-implantin the light doped drain/source, a PLDD can be formed using, forexample, B, BF₂, B_(w)H_(z) ⁺, or (B_(w)H_(z))_(m) ⁺ as a light dopantin the source region and the drain region.

According to still another embodiment according to the presentinvention, using hydrocarbon or a derivative thereof (such as C_(x)H_(y)⁺ or (C_(x)H_(y))_(n) ⁺) as a co-implant, and in such situation, theprocess flow is the same as that shown in FIG. 2 or 7, except that thepre-amorphization 301 and the co-implantation 302 are performed by onestep. That is, C_(x)H_(y) ⁺ or (C_(x)H_(y))_(n) ⁺ is used as the implantfor the pre-amorphization instead of Si, Ge, etc. and as a co-implant inthe implanted regions subsequently formed, to simultaneously achieve theamorphization of the source/drain region in the substrate and thecontrol for the diffusion of the dopants implanted in the subsequentprocesses, to obtain a good junction profile. The equal energy for suchco-implant is preferably less than the implant energy for thesource/drain, and for example less than 40 KeV. The dose may be 1×10¹⁵atoms/cm³ to 3×10¹⁵ atoms/cm³. The dopant for the light dopeddrain/source region may be boron hydride or a derivative thereof, suchas B_(w)H_(z)+ or (B_(w)H_(z))_(m)+ to obtain a more preferred shallowjunction profile.

FIG. 9 shows the B profile comparison by a secondary ion massspectroscopy (SIMS) of PLDD made in one embodiment of the method offorming a MOS transistor according to the present invention, with aco-implantation using a C implant, and PLDD made by a conventionalmethod, without a co-implantation. Both used BF₂ of 3 KeV as a dopantfor the PLDD implantation, but in the embodiment according to thepresent invention, a co-implantation was further performed using a Cimplant of 6 KeV. As shown in FIG. 9, C was used as a co-implant with Bto reduce the diffusion of B for forming a shallower and a sharperjunction. In comparison with the conventional co-implantation usingfluorine, the method of the present invention is more effective on thereduction of B diffusion.

FIG. 10 shows the As profile comparison by a secondary ion massspectroscopy (SIMS) of NLDD made in one embodiment of the method offorming a MOS transistor according to the present invention, with aco-implantation using a C implant, and PLDD made by a conventionalmethod, without a co-implantation. Both used As of 4 KeV as a dopant ina dose of 1.5×10¹⁵ atoms/cm³ for the NLDD implantation, but in theembodiment according to the present invention, a co-implantation wasfurther performed using a C implant Of 3 KeV. As shown in FIG. 10, C wasused as a co-implant with As to reduce the diffusion of As for forming ashallower and a sharper junction.

Those skilled in the art will readily observe that numerousmodifications and alterations of the device and method may be made whileretaining the teachings of the invention. Accordingly, the abovedisclosure should be construed as limited only by the metes and boundsof the appended claims.

1. A method of forming a MOS transistor, comprising: providing asubstrate having a gate thereon, a source region and a drain regiontherein with a channel region under the gate therebetween;pre-amorphizing the source region and the drain region to formamorphized regions; performing a first ion implantation to implant afirst dopant in the source region and the drain region to form a firstdoped region; forming at least a spacer on the sidewalls of the gate;performing a second ion implantation to implant a second dopant in thesource region and the drain region to form a second doped region;annealing the source region and the drain region to activate the firstdopant, regrow the amorphized regions to a substantially crystallineform, and form a junction profile; and performing a co-implantationprocess, after pre-amorphizing the source region and the drain regionand before annealing the source region and the drain region, to implantan implant in the source region and the drain region, wherein theimplant comprises carbon, a hydrocarbon compound, or a derivative of thehydrocarbon compound.
 2. The method as claimed in claim 1, wherein theimplant is implanted in the substrate at a place substantially the sameas that of the first dopant or the second dopant.
 3. The method asclaimed in claim 1, further, after pre-amorphizing the source region andthe drain region and before performing the first ion implantation,comprising: performing a halo implantation to implant a third dopantbetween the channel region and the source region and between the channelregion and the drain region.
 4. The method as claimed in claim 3,wherein the implant is implanted in the substrate at a placesubstantially the same as that of the first dopant, the second dopant,or the third dopant.
 5. The method as claimed in claim 3, wherein theco-implantation process is performed after pre-amorphizing the sourceregion and the drain region and before performing the halo implantation.6. The method as claimed in claim 3, wherein the co-implantation processis performed after performing the halo implantation and beforeperforming the first ion implantation.
 7. The method as claimed in claim1, wherein the co-implantation process is performed afterpre-amorphizing the source region and the drain region and beforeperforming the first ion implantation.
 8. The method as claimed in claim1, wherein the co-implantation process is performed after performing thefirst implantation and before performing the second ion implantation. 9.The method as claimed in claim 1, wherein the co-implantation process isperformed after performing the second implantation and before annealingthe source region and the drain region.
 10. The method as claimed inclaim 1, wherein the implant comprises one selected from a groupconsisting of C, C_(x)H_(y) ⁺, and (C_(x)H_(y))_(n) ⁺, wherein x is anumber of 1 to 10, y is a number of 4 to 20, and n is a number of 1 to1000.
 11. The method as claimed in claim 10, wherein the implantcomprises C and the first dopant comprises As or P.
 12. The method asclaimed in claim 10, wherein the implant comprises C and the firstdopant comprises B or BF₂.
 13. The method as claimed in claim 10,wherein the implant comprises C_(x)H_(y) ⁺ or (C_(x)H_(y))_(n) ⁺ and thefirst dopant comprises B, BF₂, B_(w)H_(z) ⁺, or (B_(w)H_(z))_(m) ⁺,wherein w is a number of 2 to 30, z is a number of 2 to 40, and m is anumber of 10 to
 1000. 14-23. (canceled)